Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes
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Effect of Trap Levels and Defect Inhomogeneities on Carrier Transport in SiC Crystals and Radiation Detectors
We present investigation of carrier transport and trapping in 4H-SiC single crystals and high-energy radiation detectors. SiC detectors were produced from bulk vanadium-compensated semi-insulating single crystal 4H-SiC and provided with nickel ohmic and titanium Schottky contacts. The prevailing defect levels were revealed by means of thermally stimulated current and thermally stimulated depola...
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